Abstract
We report on the fabrication and characterization of vertically integrated InAs n-channel Heterojunction Field-Effect Transistors (HFETs) and GaSb p-channel HFETs based on a (Al0.5Ga0.5)Sb/InAs/(Al0.5Ga0.5)Sb/GaSb/(Al0.5Ga0.5)Sb double quantum well heterostructure grown by molecular beam epitaxy (MBE). The operation of both p- and n-channel HFETs fabricated on the double quantum well heterostructure is demonstrated for the first time. Vertically integrated 1 µm-gate-length GaSb p-channel HFET and 1.2 µm-gate-length InAs n-channel HFETs showed decent I-V characteristics with maximum transconductances of 19 mS/mm and 88 mS/mm at 77 K, respectively.