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Josephson Junctions Using Polyimide Langmuir-Blodgett Films with a Nb/Au/PI/(Pb-Bi) Structure

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Copyright (c) 1991 The Japan Society of Applied Physics
, , Citation Tohru Kubota et al 1991 Jpn. J. Appl. Phys. 30 L393 DOI 10.1143/JJAP.30.L393

1347-4065/30/3A/L393

Abstract

We fabricated Josephson junctions with the structure of Nb/Au/PI/(Pb-Bi) using an ultrathin polyimide (PI) Langmuir- Blodgett film as an electrically insulating layer with neither the presence of native oxide layers formed on the base Nb layer nor the dissolution of the base-Nb/Au electrode during the imidization of PAA (Polyamic acid long alkylamine salts) films to produce PI LB films. A typical I-V characteristic of weakly-coupled Josephson junctions was found to be obtained.

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10.1143/JJAP.30.L393