Abstract
Nitrogen-doped p-type ZnSe films have been grown by molecular beam epitaxy using electron cyclotron resonance (ECR) plasma of N2. The nitrogen concentration in the film from 1×1017 to 6×1018 cm-3 has been controlled by adjusting both the aperture area of the ECR cell and the input microwave power. A net acceptor concentration as high as 4.5×1017 cm-3 was obtained by C-V measurements, and up to this level, the ratio of the net acceptor concentration to the incorporated nitrogen impurity concentration was almost unity. Donor-to-acceptor (DA) emission dominated the photoluminescence spectra at 4.2 K, and the emission intensity ratio of deep to DA emissions was less than 1/1000 for the ZnSe films with nitrogen concentrations less than 2×1018 cm-3.