Field Ion-Scanning Tunneling Microscopy Study of C60 on the Si(100) Surface

, , , , , and

Copyright (c) 1992 The Japan Society of Applied Physics
, , Citation Tomihiro Hashizume et al 1992 Jpn. J. Appl. Phys. 31 L880 DOI 10.1143/JJAP.31.L880

1347-4065/31/7A/L880

Abstract

Field ion-scanning tunneling microscopy was employed to study the monolayer and multilayer adsorption behaviors of the C60 fullerene on the Si(100)2×1 surface. The C60 molecules reside stably in the trough at room temperature without rotation, encompassing the 8 neighbouring dimer-forming surface Si atoms with the nearest neighbour distance of 12 Å. For the first and second layers, only local ordering of square and quasi-hexagonal patterns was observed. The orderly Stranski-Krastanov mode island formation with the hexagonal packing was observed above the third layer with its lattice constant of 10.4 Å.

Export citation and abstract BibTeX RIS

10.1143/JJAP.31.L880