A Low-Threshold 1.3 µm GaInAsP/InP Flat-Surface Circular Buried Heterostructure Surface Emitting Laser

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Copyright (c) 1993 The Japan Society of Applied Physics
, , Citation Toshihiko Baba et al 1993 Jpn. J. Appl. Phys. 32 1126 DOI 10.1143/JJAP.32.1126

1347-4065/32/3R/1126

Abstract

The liquid phase epitaxy regrowth process of the GaInAsP/InP flat-surface circular buried heterostructure (FCBH) has been improved and a perfectly buried microsize active region of 8 µm in diameter and 1.2 µm in depth was realized with good reproduclbility. Low-threshold (Ith=52 mA) lasing operation of a 1.3-µm-range FCBH surface emitting laser with a pair of dielectric micromirrors was achieved in a pulsed condition at 0°C.

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10.1143/JJAP.32.1126