Self-Formed In0.5Ga0.5As Quantum Dots on GaAs Substrates Emitting at 1.3 µm

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Copyright (c) 1994 The Japan Society of Applied Physics
, , Citation Kohki Mukai et al 1994 Jpn. J. Appl. Phys. 33 L1710 DOI 10.1143/JJAP.33.L1710

1347-4065/33/12A/L1710

Abstract

We grew 1.3-µm emitting self-formed In0.5Ga0.5As quantum dots on GaAs substrates by supplying InAs and GaAs monolayers alternately during atomic layer epitaxy. The dots were 20 nm in diameter and 10 nm in height, and were surrounded by In0.1Ga0.9As in the lateral direction and by GaAs perpendicular to the dots. Diamagnetic energy shifts of excitons in the dots clearly demonstrated three-dimensional quantum confinement.

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10.1143/JJAP.33.L1710