Low-Pressure Metalorganic Chemical Vapor Deposition of a CuGaSe2/CuAlSe2 Heterostructure

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Copyright (c) 1994 The Japan Society of Applied Physics
, , Citation Shigefusa Chichibu et al 1994 Jpn. J. Appl. Phys. 33 L286 DOI 10.1143/JJAP.33.L286

1347-4065/33/3A/L286

Abstract

A single-heterostructure of CuGaSe2/CuAlSe2 chalcopyrite semiconductors was successfully grown epitaxially on a GaAs(001) substrate using a low-pressure metal organic chemical vapor deposition technique. The valence-band discontinuity for the CuGaSe2/CuAlSe2 heterointerface was estimated to be 0.8±0.1 eV by means of X-ray photoelectron spectroscopy. The CuGaSe2/CuAlSe2 structure was found to have the straddling-type heterointerface, and the band discontinuity was found to be distributed mainly in the valence band.

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10.1143/JJAP.33.L286