Heteroepitaxial Growth of CuGaS 2 Layers by Low-Pressure Metalorganic Chemical Vapor Deposition

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Copyright (c) 1995 The Japan Society of Applied Physics
, , Citation Shigefusa Chichibu et al 1995 Jpn. J. Appl. Phys. 34 3991 DOI 10.1143/JJAP.34.3991

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1 Faculty of Science and Technology, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 278, Japan

2 Faculty of Engineering, Ehime University, 3 Bunkyo–cho, Matsuyama, Ehime 790, Japan

3 Faculty of Science and Technology, Keio University, 3–14–1 Hiyoshi, Kohoku, Yokohama, Kanagawa 223, Japan

4 Bentec Corporation, Tachihi No. 30, 6–1 Sakae, Tachikawa, Tokyo 190, Japan

Dates

  1. Received 24 February 1995
  2. Accepted 22 May 1995

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Abstract

Heteroepitaxial growth of CuGaS2 was studied by low-pressure metalorganic chemical vapor deposition using normal-tripropylgallium as a new Ga precursor, combined with cyclopentadienylcoppertriethylphosphine and ditertiarybutylsulfide. Structural and optical properties were characterized in detail. The epilayer showed the c[001]-oriented growth on both GaAs(001) and GaP(001) substrates. The lattice parameter c of the epilayers was smaller than that of the bulk single crystal. Magnitude of the residual lattice strain for CuGaS2/GaP(001) was found to be larger than that for CuGaS2/GaAs(001), even though the lattice mismatch for the former was smaller than that for the latter. The strain is considered to be introduced during cooling after the growth. A photoluminescence peak at 2.493 eV (8 K) was assigned to a free exciton emission, because the peak energy agreed with A-exciton energy obtained from photoreflectance spectra.

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10.1143/JJAP.34.3991