Abstract
Pb(Zr0.52Ti0.48)O3 (PZT)/ SrTiO3/TiN trilayered films were grown heteroepitaxially on Si(100) substrate by pulsed laser deposition. The TiN layer was employed as a bottom electrode for the PZT capacitor and the thin SrTiO3 layer was used as a seed layer for epitaxial growth of PZT. Good crystallinity and sharp interfaces of the structure were verified by X-ray diffraction analysis and secondary ion mass spectrometry, respectively. Polarization-electric field ( P-E) curve showed a remanent polarization of 12 µ C/ cm2 and a coercive field of 130 kV/cm for a PZT film of 400 nm thickness. Leakage current at E=400 kV/cm was less than 10-7 A/cm2.