Abstract
We have developed two types of single-electron simulators. One is for lower level circuit simulation, denoted as extended single-electron simulator (ESS) and the other is for higher level simulation, denoted as single electron transistor-simulation program with integrated circuit emphasis (SET-SPICE). ESS simulates small-scale arbitrary circuits with precision, performs efficient steady-state analysis besides conventional transient analysis, and visualizes probability distributions. SET-SPICE, on the other hand, simulates large-scale single-electron-transistor circuits with relatively large node capacitances at high speed and performs co-simulation of single electron transistor (SET) and complementary metal oxide semiconductor (CMOS) circuits.