Abstract
Heteroepitaxial growth of tin-doped indium oxide (ITO) and non-doped indium oxide (IO) thin films was carried out on single-crystal yttria-stabilized zirconia substrates by molecular beam epitaxy. The surface morphology of these epitaxial films was characterized by scanning electron microscopy. The doped ITO and non doped IO epitaxial films showed drastic changes in surface morphology, which suggested that Sn acted not only as a dopant but also as a growth modifier for IO films. The surface morphology analysis of IO and ITO films revealed a growth rate enhancement by Sn doping along the <111> direction.