Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN

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Copyright (c) 1998 The Japan Society of Applied Physics
, , Citation Motoaki Iwaya et al 1998 Jpn. J. Appl. Phys. 37 L316 DOI 10.1143/JJAP.37.L316

1347-4065/37/3B/L316

Abstract

The etch pit density of organometallic vapor phase epitaxy (OMVPE)-grown GaN on sapphire was discovered to reduce drastically by the insertion of either a low-temperature-deposited AlN buffer layer or GaN buffer layer between high-temperature-grown-GaN on sapphire.

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10.1143/JJAP.37.L316