Abstract
Indium tin oxide (ITO) thin films were grown on SiO2 glass and silicon (Si) substrates from a 95 wt% In2O3–5 wt% SnO2 sintered ceramic target by pulsed laser deposition (PLD). The films were deposited under different oxygen pressures (Po2) of 5×10-3 to 5×10-2 Torr at room temperature (RT) and 200°C. Po2 was found to have a critical influence on the optical and the electrical properties of the ITO films. Under a Po2 of 1×10-2 Torr, ITO films with resistivity as low as 4.5×10-4 and 1.8×10-4 Ωcm were obtained on glass at RT and 200°C, respectively. Moreover, by increasing the substrate temperature (Ts) to 350°C, the resistivity was further reduced to 1.3×10-4 Ωcm. Optical transmittance in visible light greater than 85% was attained in all the films deposited under Po2 above 5× 10-3 Torr. However, a reduction in the transmittance to less than 80% was observed as Po2 decreased. The films deposited at RT were amorphous, whereas those produced at 200°C were polycrystalline.