Fabrication of GaAs Quantum Dots by Modified Droplet Epitaxy

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Copyright (c) 2000 The Japan Society of Applied Physics
, , Citation Katsuyuki Watanabe et al 2000 Jpn. J. Appl. Phys. 39 L79 DOI 10.1143/JJAP.39.L79

1347-4065/39/2A/L79

Abstract

We propose a modified droplet epitaxy method for fabricating self-organized GaAs/AlGaAs quantum dots (QDs) with a high As flux irradiation and a low substrate temperature. By our novel method, GaAs QDs were successfully formed, retaining their pyramidal shape, original base size and density of droplets, and preventing layer-by-layer growth. Quantum size effects of the QDs were distinctly observed by photoluminescence measurements. It was confirmed that this new modified droplet epitaxy method is promising for fabricating a high-quality GaAs/AlGaAs QD system.

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10.1143/JJAP.39.L79