Threshold Voltage Behavior of Body-Tied FinFET (OMEGA MOSFET) with Respect to Ion Implantation Conditions

The body-tied finFET (called OMEGA (Ω) metal oxide semiconductor field effect transistor (MOSFET)) exhibits positive characteristics as a future complementary metal oxide semiconductor (CMOS) device. The Ω MOSFETs have unique features such as high heat dissipation to the Si substrate, no floating body effect, and low defect density, while having the key advantages of the silicon-on-insulator (SOI)-based finFET characteristics. In order to increase the threshold voltages on both the Ω NMOSFET and the Ω PMOSFET while keeping the conventional gate electrodes (n⁺ polysilicon and p+ polysilicon gates for NMOSFET and PMOSFET, respectively), the device characteristics of the Ω MOSFETs have been characterized with halo ion implantation doses for the Ω NMOSFET and lightly doped drain (LDD) doses for the Ω PMOSFET. It was shown that the V_TH adjustment could be partially achieved.