Electronic Structure in the Band-Gap Region of Protonic Conductor SrZr0.90Y0.10O3-δ

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Published 10 August 2004 • Copyright (c) 2004 The Japan Society of Applied Physics
, , Citation Tohru Higuchi et al 2004 Jpn. J. Appl. Phys. 43 5419 DOI 10.1143/JJAP.43.5419

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Author affiliations

1 Department of Applied Physics, Tokyo University of Science, Tokyo 162-8601, Japan

2 Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan

3 Center for Integrated Research in Science and Engineering, Nagoya University, Nagoya 464-8603, Japan

4 Institute for Solid State Physics, University of Tokyo, Chiba 277-8581, Japan

5 RIKEN, Hyogo 679-5198, Japan

Dates

  1. Received 9 February 2004
  2. Accepted 12 April 2004
  3. Published

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Abstract

The electronic structure in the band-gap region of protonic conductor SrZr0.90Y0.10O3-δ was studied by soft-X-ray absorption spectroscopy (XAS). The O 1s XAS spectrum of air-annealed SrZr0.90Y0.10O3-δ exhibits three distinct features, namely, the holes on top of the valence band, acceptor-induced level just above the Fermi level and Zr 4d defect-induced level at the bottom of the conduction band, which are lower in the O 1s XAS spectrum of wet-annealed SrZr0.90Y0.10O3-δ. These findings directly indicate that the doped hydrogen compensates the presence of the holes.

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10.1143/JJAP.43.5419