High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio

, , , , , , , , , , and

Published 8 November 2006 Copyright (c) 2006 The Japan Society of Applied Physics
, , Citation Masataka Imura et al 2006 Jpn. J. Appl. Phys. 45 8639 DOI 10.1143/JJAP.45.8639

1347-4065/45/11R/8639

Abstract

High-quality AlN layers were grown on c-plane sapphire substrates by high-temperature metal-organic vapor phase epitaxy. AlN layers of about 9 µm in thickness with an atomically flat surface were obtained without cracks. Multiple modulation of the V/III ratio during growth led to a reduction in the number of dislocations during the growth transition period. The dislocation density of the AlN layers was found to be less than 3×108 cm-2.

Export citation and abstract BibTeX RIS