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Comparison of Ultraviolet Photo-Field Effects between Hydrogenated Amorphous Silicon and Amorphous InGaZnO4 Thin-Film Transistors

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Published 20 January 2009 Copyright (c) 2009 The Japan Society of Applied Physics
, , Citation Kazushige Takechi et al 2009 Jpn. J. Appl. Phys. 48 010203 DOI 10.1143/JJAP.48.010203

1347-4065/48/1R/010203

Abstract

We discuss the ultraviolet (UV) photo-field effects in amorphous InGaZnO4 thin-film transistors (a-IGZO TFTs) compared with those in hydrogenated amorphous silicon (a-Si:H) TFTs. It is shown that the UV illumination induces a much more significant threshold voltage (Vt) decrease and OFF-current increase for the a-IGZO TFTs than for the a-Si:H TFTs. The significant Vt decrease is found to take several tens of min to return to the initial state after switching off the UV light. A qualitative model is introduced to explain the photoresponse unique to the a-IGZO TFTs.

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