Abstract
High-resolution X-ray diffraction measurements of GaN and AlGaN grown on 4H- and 6H-SiC(0001) vicinal substrates with misorientation angles of up to 9° are presented. Growth of (Al)GaN was carried out by plasma-assisted molecular beam epitaxy. The c-axis tilt, i.e., inclination of the (Al)GaN c-axis relative to that of SiC, was systematically investigated. The inclination angle clearly depended on the SiC substrate misorientation angle, while it was independent of the (Al)GaN growth temperature, SiC polytype, and substrate misorientation direction. The behavior observed for both GaN and AlGaN is in excellent agreement with the model proposed previously by Nagai for the InGaAs/GaAs system.
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