Abstract
InAsSb immersion photoconductors with a response wavelength range of 2–9 µm operated at room temperature were reported. The detectors are based on InAsSb single crystals grown on InAs substrates by melt epitaxy (ME). Van der Pauw measurements showed that the 300 K electron mobilities of InAsSb materials are higher than 5×104 cm2 V-1 s-1 with carrier densities of (1–3)×1016 cm-3. The photoconductors were measured using a standard blackbody source at a temperature of 500 K and a modulation frequency of 800 Hz under an applied bias current of 10 mA. At 293 K, the blackbody detectivity Dbb* (500 K, 800) reaches (2–6)×108 cm Hz1/2 W-1, indicating the high sensitivity of the detectors and their potential detection applications.
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