Abstract
Highly axis-oriented V2O5 thin films were fabricated by metal–organic decomposition (MOD) on SiO2/Si substrates. V2O5 thin films were reduced to VOx thin films by heat treatment with a temperature of 530–580 °C, pressure of 1.2–3 Pa in O2 and heating time of 2–5 h. The VOx thin films exhibited an abrupt transition, with a resistivity change of up to 3 orders of magnitude at a transition temperature of about 55 °C. The hysteresis loop width in the transition was about 3 °C. The grain size of the VOx thin films with an abrupt transition was 200–300 nm. Furthermore, these films had a temperature coefficient of resistivity (TCR) of up to 2.2%/K at 300 K.