Abstract
A method of determining the junction temperature under breakdown condition is described. The junction temperature T1 is calculated from the applied voltage and the current in the following equation: V1=VB0·{1+β(T1-T0)}+I1·ρsc0·{1+γ(T1-T0)}, where V1 and I1 are the applied voltage and current, VB0 and ρsc0 are the breakdown voltage and the space charge resistance at the ambient temperature T0, and β and γ are the temperature coefficients of VB and ρsc, respectively. Based on this method, the burn-out temperatures of mesa-type Si p+–n junction diodes are found to be between 200∼300°C. The cause of burn-out at such a low temperature is also discussed.