Subho Chatterjee
ABSTRACT
We present an accurate model of the self-heating effect in the Spin-Torque-Transfer RAM (STTRAM) using finite-volume-methods and thermal RC based compact models. We couple device level thermal simulation to the self-heating phenomenon to show that self-heating during write operation can result in significant temperature increase in STTRAM which in turn adversely affect the read disturb, leakage energy and sensing accuracy.
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- S. Salahuddin, and S. Datta, "Self-consistent simulation of quantum transport and magnetization dynamics in spin-torque based devices," Applied Physics Letters, 15, 2006, p. 153504.Google ScholarCross Ref
- S.Chatterjee et al, "A Methodology for Robust, Energy Efficient Design of Spin-Torque-Transfer RAM Arrays at Scaled Technologies", ICCAD 2009. Google ScholarDigital Library
- www.eas.asu.edu/~ptmGoogle Scholar
- T.Chiang et al, "Compact modeling and SPICE-based simulation for electrothermalanalysis of multilevel ULSI interconnects", ICCAD 2001 Google ScholarDigital Library
Index Terms
- Analysis of thermal behaviors of spin-torque-transfer RAM: a simulation study
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