Abstract
We report our recent researches and developments of Ge1−xSnx and related group-IV semiconductor materials for the device integration on an Si nanoelectronics platform. We investigated the energy band engineering and crystal growth technology for thin films of Ge1−xSnx, Si1−xSnx, and related ternary alloys. The energy band structure and band alignment of these semiconductor materials have been experimentally evaluated and discussed. Also, the effect of a Ge1−xSnx interlayer on the electronic property at the metal/Ge interface has been investigated.