Abstract
TEOS and 
atmospheric pressure chemical vapor deposition has excellent conformality, film quality, and low particle generation; however, deposition rate obtained on thermal oxide is lower than that on silicon and the films have rough surface and higher etching rates if deposited with high ozone concentration. When deposited on silicon with a higher ozone concentration, films of sufficiently high quality are obtained. This drawback of the low film quality has been removed by double‐layer deposition with two different ozone concentrations on thermal oxide, depositing the thin films at first with a low ozone concentration on thermal oxide and next with a high ozone concentration to the desired thickness. The film quality, namely, etch rate, depends on the thickness and ozone concentration for the first layer. The thicker the first film and the higher the ozone concentration, the better the film quality. By adjusting the first layer's thickness and ozone concentration, films can be obtained with quality that is sufficiently high for VLSI device applications.