Click here to close this panel.
D. J. Godbey, M. E. Twigg, H. L. Hughes, L. J. Palkuti, P. Leonov and J. J. Wang
© 1990 ECS - The Electrochemical Society
,
,
Citation D. J. Godbey et al 1990 J. Electrochem. Soc. 137 3219
DOI 10.1149/1.2086190
26 Total downloads
Bond and etch‐back silicon on insulator was fabricated using a strain‐selective etch and a novel etch stop consisting of a strained 
layer deposited by molecular beam epitaxy. The process was used to fabricate a 200–350 nm silicon layer on insulator. A 350‐nm silicon film on insulator fabricated by this technique was very lightly p‐type with a carrier density of less than 1015 cm−3.
