On Three‐Dimensional Transport Phenomena in CVD Processes

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© 1987 ECS - The Electrochemical Society
, , Citation S. Rhee et al 1987 J. Electrochem. Soc. 134 2552 DOI 10.1149/1.2100242

1945-7111/134/10/2552

Abstract

A three‐dimensional representation has been developed for the velocity, temperature, and concentration fields in a CVD reactor of a somewhat idealized geometry. Computation has shown that the three‐dimensional representation can account for the establishment of horizontal, thermally driven roll cells, which would markedly interfere with the uniformity of the deposition rate. Operation at reduced pressure would eliminate this effect. Furthermore, for the conditions considered, the use of a point source inlet, even at high pressure, was found to give a more uniform spatial deposition rate near the entrance region than a plug‐flow inlet. The method outlined in this paper could be suitable for development of CADCAM methods for the design of CVD reactors.

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10.1149/1.2100242