Abstract
The chemical etching characteristics of (001) MBE and LPE 
and 
layers grown on 
have been studied for various etching systems: 
, 
, and 
using photoresist as a mask. The etch profiles were examined on stripes oriented along the [110] and [110] directions and on circular mesa structures. The etch rates and the etch‐revealed planes are reported, together with a detailed discussion of the crystallography. Experimentally observed different etching characteristics between LPE and MBE 
layers are reported and discussed. The use of these etching solutions for device fabrication is also briefly discussed.