S. Biswas1, A. Mondal1, D. Mukherjee1 and P. Pramanik1
© 1986 ECS - The Electrochemical Society
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Citation S. Biswas et al 1986 J. Electrochem. Soc. 133 48
DOI 10.1149/1.2108539
41 Total downloads
A solution growth technique has been developed for the deposition of thin films of bismuth sulfide on glass substrate at room temperature (25°C) using Bi+3‐salt solution, triethanolamine (TEA), ammonia, and thioacetamide as reacting agents. The material has been characterized by chemical analysis, x‐ray studies, and optical and electrical measurements. The amorphous films behave as p‐type semiconductors with a bandgap of 1.7 eV.
