Abstract
Phosphosilicate glass films have been deposited on silicon substrates by the reaction of tetraethyl orthosilicate (TEOS), phosphine, and oxygen. The depositions are carried out at 630°–700°C in a low pressure CVD reactor. The dependence of the deposition rate, the phosphorus oxide concentration, the thickness uniformity across a wafer, and the depletion in the deposition rate across the deposition zone upon the deposition conditions have been investigated. The step coverage obtained in the reaction is conformal. The refractive index, the etch rate, and the film stress are reported.