Abstract
An accurate knowledge of the impurity distribution in a semiconductor device is essential for its proper characterization. This task can be made simpler if one knows properly the concentration dependent impurity diffusion coefficient. In recent years various arsenic diffusion models were developed to explain the experimental results, but it seems that a better physical model is required. The present work gives the arsenic concentration dependent diffusivity in silicon considering different mechanisms involved during the diffusion process. The effects of heavy doping and high temperature have been successfully included in the present work. Attempts are made to calculate theoretical arsenic diffusion profiles only from the knowledge of the processing data. It is found that our physical model gives quite good results which are in reasonable agreement with the experimental profiles.