Optical Properties of Silicon Nitride

© 1973 ECS - The Electrochemical Society
, , Citation Herbert R. Philipp 1973 J. Electrochem. Soc. 120 295 DOI 10.1149/1.2403440

1945-7111/120/2/295

Abstract

The optical properties of silicon nitride layers formed by the pyrolysis of a mixture of and are presented. These results are used together with published data for materials to formulate a bonding model for and which quantitatively describes their optical characteristics. The basic units of this structure are Si tetrahedra of the type in which the distribution of atoms for all possible is statistical for any given atom ratio.

Export citation and abstract BibTeX RIS

10.1149/1.2403440