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Impurity Distribution in Epitaxial Silicon Films

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© 1962 ECS - The Electrochemical Society
, , Citation C. O. Thomas et al 1962 J. Electrochem. Soc. 109 1055 DOI 10.1149/1.2425235

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1 Bell Telephone Laboratories, Incorporated, Murray Hill, New Jersey

Dates

  1. Received 5 April 1962
  2. Revised 26 June 1962

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Abstract

A differential capacitance‐voltage method for determining doping profiles in depth in epitaxial semiconductor films is described. Experimental profiles, in which the doping level generally is not flat but decreases with film thickness, are shown for several film growth conditions. A possible explanation for the observed distribution is discussed.

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