Epitaxial Silicon Films by the Hydrogen Reduction of SiCl4

H. C. Theuerer

doi:10.1149/1.2428182

Journal of The Electrochemical Society

Epitaxial Silicon Films by the Hydrogen Reduction of SiCl₄

H. C. Theuerer¹

© 1961 ECS - The Electrochemical Society
Journal of The Electrochemical Society, Volume 108, Number 7 Citation H. C. Theuerer 1961 J. Electrochem. Soc. 108 649 DOI 10.1149/1.2428182

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¹ Bell Telephone Laboratories, Incorporated, Murray Hill, New Jersey

Dates

Received 30 January 1961
Revised 13 March 1961

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Abstract

Epitaxial films of silicon with controlled thickness and resistivity either n‐ or p‐type may be grown using the hydrogen reduction of silicon tetrachloride appropriately doped with or . The basic chemistry and reaction kinetics pertinent to the growth of these films are discussed in detail in this paper.

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