Abstract
Different selective epitaxial growth processes to deposit buried SiGe channels with Ge contents in the range of 25-55% and with an ultra thin Si capping layer have been successfully developed and implemented in pMOS device flows. Relatively low deposition temperatures assure the absence of SiGe islands and enable high quality strained SiGe layers. The required low growth temperature governed the choice of precursors used. In this contribution we review in detail the developed SiGe processes together with the deposition of the ultra thin Si cap layer. Electrical data obtained on the devices with incorporated Si0.75Ge0.25 and Si0.55Ge0.45 buried channels are presented as well.