Crystalline Gadolinium Oxide: A Promising High-k Candidate for Future CMOS Generations

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© 2010 ECS - The Electrochemical Society
, , Citation Ralf Endres et al 2010 ECS Trans. 33 25 DOI 10.1149/1.3481588

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1 Institute for Semiconductor Technology and Nanoelectronics, Darmstadt University of Technology, Schlossgartenstrasse 8, Darmstadt, 64289 Germany

2 AMICA, AMO GmbH

3 Leibniz University of Hannover

4 Technische Universität Darmstadt

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Abstract

In this work, epitaxial grown gadolinium oxide (Gd2O3) has been investigated as promising high-k gate dielectric for future CMOS generations. Fully functional metal gate MOS capacitors and MOS field effect transistors (MOSFETs) on p- and n-type silicon substrates with titanium nitride (TiN) gate electrode have been fabricated in a gentle gate-last process and are electrically characterized in detail.

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10.1149/1.3481588