Optical Activation of Si and Ge Nanowires Codoping with Er:Yb Rare Earth by Sol–Gel Methods
Si and Ge are both important semiconducting electronic materials with indirect band gap. Long length of their nanowires exceeding 1 m, compared with the isolated nanocrystals, provides a very high areal density of Er ions. In addition, Yb ions are an useful sensitizer for the Er emission. Strong optical activations of Er-doped and Er:Yb-codoped SiNWs and GeNWs by sol–gel methods are observed. The photoluminescence (PL) intensity of Er-doped GeNWs is higher than that of Er-doped SiNWs. Furthermore, Yb ions greatly improved the PL intensity of Er:Yb-codoped GeNWs, but they has no effect on the PL intensity of Er:Yb-codoped SiNWs. These differences are mainly due to the indirect gap nature of Si and Ge semiconductor.
Keywords: ER; GE NANOWIRE; OPTICAL ACTIVATION; PHOTOLUMINESCENCE; SI NANOWIRE; YB
Document Type: Research Article
Publication date: 01 August 2007
- Journal of Nanoelectronics and Optoelectronics (JNO) is an international and cross-disciplinary peer reviewed journal to consolidate emerging experimental and theoretical research activities in the areas of nanoscale electronic and optoelectronic materials and devices into a single and unique reference source. JNO aims to facilitate the dissemination of interdisciplinary research results in the inter-related and converging fields of nanoelectronics and optoelectronics.
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