Abstract
Electron overflow from the active region confines the AlGaN deep-ultraviolet (UV) light-emitting diode (LED) performance. This paper proposes a novel approach to mitigate the electron leakage problem in AlGaN deep-UV LEDs using concave quantum barrier (QB) structures. The proposed QBs suppress the electron leakage by significantly reducing the electron mean free path that improves the electron capturing capability in the active region. Overall, such an engineered structure also enhances the hole injection into the active region, thereby enhancing the radiative recombination in the quantum wells. As a result, our study shows that the proposed structure exhibits an optical power of 9.16 mW at ${\sim}{{284}}\;{\rm{nm}}$ wavelength, which is boosted by ${\sim}{40.5}\%$ compared to conventional AlGaN UV LED operating at 60 mA injection current.
© 2021 Optical Society of America
Full Article | PDF ArticleMore Like This
Huabin Yu, Zhongjie Ren, Haochen Zhang, Jiangnan Dai, Changqing Chen, Shibing Long, and Haiding Sun
Opt. Express 27(20) A1544-A1553 (2019)
Ravi Teja Velpula, Barsha Jain, Ha Quoc Thang Bui, Fatemeh Mohammadi Shakiba, Jeffrey Jude, Moses Tumuna, Hoang-Duy Nguyen, Trupti Ranjan Lenka, and Hieu Pham Trung Nguyen
Appl. Opt. 59(17) 5276-5281 (2020)
Barsha Jain, Ravi Teja Velpula, Swetha Velpula, Hoang-Duy Nguyen, and Hieu Pham Trung Nguyen
J. Opt. Soc. Am. B 37(9) 2564-2569 (2020)