The neutral silicon split-vacancy defect in diamond, a promising color center for quantum communication

Brendon C. Rose; Ding Huang; Alexei M. Tyryshkin; Sorawis Sangtawesin; Daniel J. Twitchen; Matthew L. Markham; Andrew M. Edmonds; Adam Gali; Alastair Stacey; Wuyi Wang; Ulrika D’Haenens Johansson; Alexandre Zaitsev; Stephen A. Lyon; Nathalie P. de Leon

doi:10.1364/CLEO_QELS.2017.FTu1E.3

Conference on Lasers and Electro-Optics
OSA Technical Digest (online) (Optica Publishing Group, 2017),
paper FTu1E.3
•https://doi.org/10.1364/CLEO_QELS.2017.FTu1E.3

The neutral silicon split-vacancy defect in diamond, a promising color center for quantum communication

Brendon C. Rose, Ding Huang, Alexei M. Tyryshkin, Sorawis Sangtawesin, Daniel J. Twitchen, Matthew L. Markham, Andrew M. Edmonds, Adam Gali, Alastair Stacey, Wuyi Wang, Ulrika D’Haenens Johansson, Alexandre Zaitsev, Stephen A. Lyon, and Nathalie P. de Leon

CLEO: QELS_Fundamental Science 2017

San Jose, California United States
14–19 May 2017
ISBN: 978-1-943580-27-9

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Defects in Solids for Coherent Control and Single-Photon Generation (FTu1E)

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B. C. Rose, D. Huang, A. M. Tyryshkin, S. Sangtawesin, D. J. Twitchen, M. L. Markham, A. M. Edmonds, A. Gali, A. Stacey, W. Wang, U. D. ’H. Johansson, A. Zaitsev, S. A. Lyon, and N. P. de Leon, "The neutral silicon split-vacancy defect in diamond, a promising color center for quantum communication," in Conference on Lasers and Electro-Optics, OSA Technical Digest (online) (Optica Publishing Group, 2017), paper FTu1E.3.

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Abstract

We investigate the neutral charge state of the interstitial silicon split-vacancy defect in diamond for use in quantum communication applications using pulsed electron spin resonance at X-Band magnetic fields (~3500 G) and confocal microscopy.

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