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InGaN quantum well with gradually varying indium content for high-efficiency GaN-based green light-emitting diodes

Shengjun Zhou, Zehong Wan, Yu Lei, Bin Tang, Guoyi Tao, Peng Du, and Xiaoyu Zhao

Open Access Open Access

Abstract

High-efficiency GaN-based green LEDs are of paramount importance to the development of the monolithic integration of multicolor emitters and full-color high-resolution displays. Here, the InGaN quantum well with gradually varying indium (In) content was proposed for improving the performance of GaN-based green LEDs. The InGaN quantum well with gradually varying In content not only alleviates the quantum-confined Stark effect (QCSE), but also yields a low Auger recombination rate. Consequently, the gradual In content green LEDs exhibited increased light output power (LOP) and reduced efficiency droop as compared to constant In content green LEDs. At 60 A/cm2, the LOPs of the constant In content green LEDs and the gradual In content green LEDs were 33.9 mW and 55.2 mW, respectively. At 150 A/cm2, the efficiency droops for the constant In content green LEDs and the gradual In content green LEDs were 61% and 37.6%, respectively. This work demonstrates the potential for the gradual In content InGaN to replace constant In content InGaN as quantum wells in LED devices in a technologically and commercially effective manner.

© 2022 Optica Publishing Group

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Data availability

Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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Figures (5)
Fig. 1.
Fig. 1. (a) Schematic illustration of the green LED structures for sample A and sample B. The epitaxial growth conditions of the InGaN quantum well for (b) sample A and (c) sample B. AFM images of (d) sample A and (e) sample B, showing their surface morphologies.

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Fig. 2.
Fig. 2. TRPL decay curves of sample A and sample B at (a) 300 K and (b) 77 K. The dashed lines are fitting results of the biexponential decay model.

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Fig. 3.
Fig. 3. Room-temperature EL spectra of (a) sample A and (b) sample B with increasing injection current.

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Fig. 4.
Fig. 4. (a) LOPs and (b) EQEs as a function of current density for sample A and sample B. Inset shows the EL image of green LED.

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Fig. 5.
Fig. 5. Simulated energy band diagram and electron-hole wave functions of (a) sample A and (b) sample B at 20 A/cm2. Simulated (c) radiative recombination rate and (d) Auger recombination rate of sample A and sample B at 20 A/cm2.

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Equations (1)

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E Q E = P / h ν I / e ,
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