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Ion implantation in β-SiC: Effect of channeling direction and critical energy for amorphization

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Abstract

Damage in single-crystal β-SiC(100) as a result of ion bombardment has been studied using Rutherford backscattering/channeling and cross-section transmission electron microscopy. Samples were implanted with Al (130 keV) and Si (87 keV) with doses between 4 and 20 × 1014 cm−2 at liquid nitrogen and room temperatures. Backscattering spectra for He+ channeling as a function of implantation dose were initially obtained in the [110] direction to determine damage accumulation. However, the backscattered yield along this direction was shown to be enhanced as a result of uniaxial implantation-induced strain along [100]. Spectra obtained by channeling along this latter direction were used along with the computer program TRIM to calculate the critical energy for amorphization. The results for amorphization of β-SiC at liquid nitrogen and room temperature are ∼ 14.5 eV/atom and ∼ 22.5 eV/atom, respectively.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina, 27695-7907, USA

    J. A. Edmond & R. F. Davis

  2. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831-6048, USA

    S. P. Withrow

  3. Oak Ridge Associated Universities, Oak Ridge, Tennessee, 37831, USA

    K. L. More

Authors
  1. J. A. Edmond
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  2. R. F. Davis
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  3. S. P. Withrow
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  4. K. L. More
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Edmond, J.A., Davis, R.F., Withrow, S.P. et al. Ion implantation in β-SiC: Effect of channeling direction and critical energy for amorphization. Journal of Materials Research 3, 321–328 (1988). https://doi.org/10.1557/JMR.1988.0321

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  • DOI: https://doi.org/10.1557/JMR.1988.0321

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