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The effect of annealing environments on the epitaxial recrystallization of ion-beam-amorphized SrTiO3

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Abstract

Time-resolved reflectivity and Rutherford backscattering spectroscopy were used to investigate the effects of regrowth environments on the thermally induced solid phase epitaxial (SPE) regrowth of amorphous near-surface layers produced by ion implantation of single-crystal SrTiO3. Water vapor in the regrowth atmosphere was found to alter both the apparent rate and activation energy of the SPE regrowth. For relatively dry atmospheres, a single constant regrowth rate is observed at any given temperature, and the activation energy is 1.2 ± 0.1 eV. When the concentration of H2O vapor in the atmosphere is increased, however, the regrowth activation energy effectively decreases to ∼0.95 eV. When regrown in atmospheres containing H2O vapor, the SrTiO3 amorphous layer exhibits two distinct stages of SPE regrowth as compared to the single rate found for dry anneals. This two-stage process apparently results from the diffusion of H/OH from the regrowth atmosphere at the surface of the crystal through the amorphous layer to the regrowing crystalline/amorphous interface.

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Author notes

  1. J. Rankin

    Present address: Present address: Radcliffe College, Mary Ingraham Bunting Institute, Cambridge, Massachusetts, USA

  2. J. C. McCallum

    Present address: Present address: Microelectronics and Materials Technology Centre, Royal Melbourne Institute of Technology, Melbourne, Victoria, GPO Box 2476V, 3001, Australia

Authors and Affiliations

  1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA

    J. Rankin, J. C. McCallum & L. A. Boatner

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  1. J. Rankin
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  2. J. C. McCallum
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  3. L. A. Boatner
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Rankin, J., McCallum, J.C. & Boatner, L.A. The effect of annealing environments on the epitaxial recrystallization of ion-beam-amorphized SrTiO3 . Journal of Materials Research 7, 71 (1992). https://doi.org/10.1557/JMR.1992.0717

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