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Molecular beam homoepitaxial growth of MgO(001)

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Abstract

We describe homoepitaxial growth and detailed in situ characterization of MgO(001). We have used, for the first time, high-speed Auger electron spectroscopy as a real-time probe of film composition during growth. Excellent short-range and long-range crystallographic order are achieved in films grown to a thickness of several hundred angstroms in the substrate temperature range of 450 °C to 750 °C. Moreover, the films become more laminar as the growth temperature increases, suggesting that MgO grows homoepitaxially by the step-flow growth mechanism at elevated temperature. The surfaces of films grown at 650°and 750 °C are smoother than those obtained by cleaving MgO(001).

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Authors and Affiliations

  1. Molecular Science Research Center, Pacific Northwest Laboratory, Richland, Washington, 99352, USA

    S. A. Chambers, T. T. Tran & T. A. Hileman

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  1. S. A. Chambers
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  2. T. T. Tran
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  3. T. A. Hileman
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Chambers, S.A., Tran, T.T. & Hileman, T.A. Molecular beam homoepitaxial growth of MgO(001). Journal of Materials Research 9, 2944–2952 (1994). https://doi.org/10.1557/JMR.1994.2944

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  • DOI: https://doi.org/10.1557/JMR.1994.2944

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