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Contribution of electrodes and microstructures to the electrical properties of Pb(Zr0.53Ti0.47)O3 thin film capacitors

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Abstract

Pb(Zr0.53Ti0.47)O3 (PZT) thin film capacitors have been fabricated with four electrode combinations: Pt/PZT/Pt/SiO2Si, RuO2/PZT/Pt/SiO2/Si, RuO2/PZT/RuO2/SiO2/Si, and Pt/PZT/RuO2/SiO2/Si. It is shown that polarization fatigue is determined largely by the electrode type (Pt vs RuO2), and microstructure has only a second-order effect on fatigue. If either the top or bottom electrode is platinum, significant polarization fatigue occurs. Fatigue-free capacitors are obtained only when both electrodes are RuO2. In contrast, the bottom electrode is found to have a major effect on the leakage characteristics of the PZT capacitors, presumably via microstructural modifications. Capacitors with bottom RuO2 electrodes show high leakage currents (J = 10−3-10−5 A/cm2 at 1 V) irrespective of the top electrode material. Capacitors with Pt bottom electrodes have much lower leakage currents (J = 10−8 A/cm2 at 1 V) irrespective of the top electrode material. At low voltage, the I-V curves show ohmic behavior and negligible polarity dependence for all capacitor types. At higher voltages, the leakage current is probably Schottky emission controlled for the capacitors with Pt bottom electrodes.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina, 27695-7907, USA

    H. N. Al-Shareef, A. I. Kingon, X. Chen, K. R. Bellur & O. Auciello

  2. Electronics Technology Division, MCNC, Research Triangle Park, North Carolina, 27709-2889, USA

    O. Auciello

Authors
  1. H. N. Al-Shareef
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  2. A. I. Kingon
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  3. X. Chen
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  4. K. R. Bellur
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  5. O. Auciello
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Al-Shareef, H.N., Kingon, A.I., Chen, X. et al. Contribution of electrodes and microstructures to the electrical properties of Pb(Zr0.53Ti0.47)O3 thin film capacitors. Journal of Materials Research 9, 2968–2975 (1994). https://doi.org/10.1557/JMR.1994.2968

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  • DOI: https://doi.org/10.1557/JMR.1994.2968

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