Abstract
Recognizing that speed, size, reliability, and cost are the principal driving forces for advanced electronic packages, this review article describes the much needed development of a new, phase transformation-free, single-phase silica dielectric with a dielectric constant (k) of about 4, the lowest among the inorganic oxides, and a coefficient of thermal expansion (CTE) of about 3 ppm/°C, similar to that of Si. This dielectric, consisting largely of SiO2, represents a gain in media speed by about 50% over alumina dielectric, combined with an improvement in reliability of the package by a factor of about 1000. The feature size and system cost can also be drastically reduced by using this dielectric. It is made from a mixture of binary borosilicate glasses that normally exhibit an undesirable characteristic of precipitating cristobalite during sintering that severely weakens the structure. The most important aspect of this article is the design and development of a strategy that prevents the cristobalite growth by incorporating a crystal growth inhibitor in the binary mixture of glasses. Since kinetics, not thermodynamics, are shown to be the key to success of this strategy, the roles of rate-controlling parameters are deliberately emphasized. A working model is delineated to identify compositions that yield a cristobalite-free silica dielectric with values of CTE that match those of Si and GaAs. Critical issues of co-firing between metals and this dielectric are addressed within the context of multilayer packaging fabrication. Finally, a list of measured properties is presented that clearly shows new opportunities for this silica dielectric.
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References
T. K. Gupta, Int. J. Microcirct. Elect. Packaging, 17 1, First Qtr., pp 80–97 (1994).
R. R. Tummala, in Microelectronics Packaging Handbook, edited by R. R. Tummala and E.J. Rymaszewski (Van Nostrand Reinhold, New York, 1989), Chap. 7.
J. I. Steinberg, S. J. Horowitz, and R. J. Bacher, in Advances in Ceramics, Vol. 19, Multilayer Ceramic Devices, edited by J. B. Blum and W.R. Cannon (Am. Ceram. Soc. Inc., Westerville, OH, 1986), pp. 31–39.
W. D. Kingery, H.K. Bowen, and D.R. Uhlmann, in Introduction to Ceramics (John Wiley & Sons, New York, 1976), Chaps. 2–3 and 17–18.
K. Kata, Y. Shimada, and H. Takamizawa, IEEE Trans. CHMT, 13 (2), 448–451 (1990).
T. K. Gupta, J. H. Bechtold, R. C. Kuznicki, L.H. Kadoff, and B. R. Rossing, J. Mater. Sci. 12, 2421–2426 (1977).
J-H. Jean and T.K. Gupta, J. Mater. Res. 9, 486–492 (1994).
J-H. Jean and T.K. Gupta, J. Mater. Res. 7, 3342–3347 (1992).
J-H. Jean and T. K. Gupta, J. Mater. Res. 7, 3103–3111 (1992); in Nucleation and Crystallization in Liquids and Glasses, edited by M.C. Weinberg, Ceram. Trans. 30, 347–354 (1993).
N. G. Ainslie, C.R. Morelock, and D. Turnbull, in Symposium on Nucleation and Crystallization in Glasses and Melts (Am. Ceram. Soc., Westerville, OH, 1962), p. 97.
F. E. Wagstaff, S.D. Brown, and I.B. Cutler, Phys. Chem. Glasses 5, 76 (1964).
F. E. Wagstaff, J. Am. Ceram. Soc. 52, 650 (1969).
D. R. Uhlmann, in Advances in Nucleation and Crystallization in Glasses, edited by L.L. Hench and S. W. Freiman (Am. Ceram. Soc., Westerville, OH, 1971), p. 91.
M. Avrami, J. Chem. Phys. 7, 1103 (1939); 8, 212 (1940); 9, 177 (1941).
W. Espe, in Materials of High Vacuum Technology (Pergamon Press, Oxford, 1968), Vol. 2, Chap. 10.
S. M. Cox and P.L. Kirby, Nature (London) 159, 162 (1947).
G. H. Frischat, in Ionic Diffusion in Oxide Glasses (Trans. Tech., Bay Village, OH, 1975), pp. 138 and 147.
T. K. Gupta and J-H. Jean, J. Mater. Res. 9, 999–1005 (1994).
J-H. Jean and T.K. Gupta, J. Mater. Res. 8, 356–363 (1993).
J-H. Jean and T. K. Gupta, J. Am. Ceram. Soc. 76 (8), 2010–2016 (1993); J. Mater. Res. 8, 1767–1769 (1993).
W. Tie, G. Fangtian, Z. Ao, Z. Yongzi, Z. Hiaoxing, and Q. Li, in Collected Papers: XIV Int. Cong. on Glass (Ind. Ceram. Soc., Calcutta, India, 1986), Vol. 1, p. 374.
Y. Imanaka, S. Aoki, N. Kamehara, and K. Niwa, J. Ceram. Soc. Jpn. Int. Ed. 95, 1066–1068 (1987); J. Fujitsu Sci. Tech. 25, 73–79 (1989).
J. F. MacDowell, Alumina Science and Technology Handbook, (Am. Ceram. Soc., Westerville, OH, 1990), p 365.
J-H. Jean and T. K. Gupta, J. Mater. Res. 7, 2514–2520 (1992).
R. B. Sosman, in Phases of SiO2 (Rutgers Univ. Press., New Brunswick, NJ, 1965), pp. 121–147.
R. W. Grimshaw, J. Hargreaves, and A. L. Roberts, Trans. Brit. Ceram. Soc. 55, 36–56 (1956).
J-H. Jean and T. K. Gupta, J. Mater. Res. 10, 1312–1320 (1995); J. Am. Ceram. Soc. 76 (3), 751–753 (1993).
J-H. Jean and T. K. Gupta, J. Mater. Res. 8, 2393–2399 (1993).
M. B. Volf, in Chemical Approach to Glasses (Elsevier, New York, 1984), p. 416.
J-H. Jean and T. K. Gupta, in Materials in Microelectronic and Optoelectronic Packaging, edited by H. C. Ling, K. Niwa, V. N. Shukla, Ceram. Trans. 33, 261–270 (1993); J. Mater. Res. 9, 771–780 (1994); J. Mater. Res. 9, 1990–1996 (1994).
J-H. Jean and T. K. Gupta, IEEE Trans. CPMT, Part B 17 (2), 228–233 (1994); Int. J. Microcircuits Elec. Packaging 17, (1), 2nd Qtr., 169–175 (1994) Int. Elec. Pkg. Conf. (IEPS), 1993, San Diego, CA, pp. 993–1002.
D. M. Mattox, S. R. Gurkovich, J.A. Olenic, and M. Mason, Ceram. Eng. Sci. Proc. 9 (11–12), 1567–1578 (1988).
J. C. Maxwell, in Electricity and Magnetism (Clarendon, Oxford, 1892), Vol. 1, p. 452.
J. Turner, J. Res. Natl. Bur. Stand., 37, 239 (1946).
R. R. Tummala, J. Am. Ceram. Soc. 74 (5), 895–908 (1991).
A. H. Kumar and R. R. Tummala, Int. J. Hybrid Microelectron. 14 (4), 137–150 (1991).
H. T. Sawhill, R. H. Jensen, and K. R. Mikeska, Ceram. Trans. 15, 611–628 (1990).
Y. Shimada, K. Utsumi, and T. Ikeda, Int. J. Hybrid Microelectron. 7 (4), 29–37 (1984).
R. Kambe, Am. Ceram. Soc. Bull. 71 (6), 962–968 (1992).
S. Nishigaki, S. Yano, J. Fukuta, M. Fukaya, and T. Fuwa, ISHM 1985, 225–234 (1985).
H. C. Bhadwar, S. T. Sawhill, D. H. Scheiber, S. Kawasaki, and E. A. Kemp, Hyb. Circuit Tech., 31–38 (May 1989).
A. L. Dow and M. J. Green, Hybrid Tech., 28–32 (Oct. 1991).
F. Dilazzaro and D. Newmann, ISHM 1991, 409–413 (1991).
K. Kata, A. Sasaki, Y. Shimada, and K. Utsumi, ISHM 1990 Proc., 308–315 (1990).
G-Q. Lu, R. C. Sutterlin, and T. K. Gupta, J. Am. Ceram Soc. 76 (8), 1907–1914 (1993).
R. C. Sutterlin, G-Q. Lu, and T. K. Gupta, in Materials in Microelectronic and Optoelectronic Packaging, edited by H. C. Ling, K. Niwa, and V. N. Shukla, Ceram. Trans. 33, 435–444 (1993).
G. M. Adema, M. J. Berry and I. Turlik, Elec. Packg. Prod., 72–76 (Feb. 1992).
P. Garrou, Elec. Packg. Prod., suppl. 44–47 (October 1992).
B. K. Gilbert and W.L. Walters, ICMCM Proceedings, 167–173 (1992).
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Gupta, T.K., Jean, JH. Principles of the development of a silica dielectric for microelectronics packaging. Journal of Materials Research 11, 243–263 (1996). https://doi.org/10.1557/JMR.1996.0030
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DOI: https://doi.org/10.1557/JMR.1996.0030