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Characteristics of spin-on ferroelectric SrBi2Ta2O9 thin film capacitors for ferroelectric random access memory applications

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Abstract

We report on the properties and characterization of SrBi2Ta2O9 (SBT, or Y − 1) thin film capacitors for ferroelectric random access memory (FERAM) applications. The films were prepared by spin-coating from carboxylate precursors. The remanent polarization (Pr) was 5−6 μC/cm2 and the coercive field was ∼55 kV/cm. Excellent fatigue endurance was observed up to 1011 cycles. Auger analysis indicates bismuth diffusion through the Pt electrode after capacitor anneal which might require excess Bi in the precursor solution for stoichiometry control. No detectable amount of α emission was found from SBT films, which reduces the possibility of soft error when used in the memory devices.

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Authors and Affiliations

  1. Advanced Materials Group, Materials Research and Strategic Technologies, Motorola, Austin, Texas, 78721, USA

    Peir Y. Chu, Robert E. Jones Jr., Peter Zurcher, Deborah J. Taylor, Bo Jiang & Sherry J. Gillespie

  2. Advanced Products Research and Development Laboratory, Motorola, Austin, Texas, 78721, USA

    Y. T. Lii

  3. Materials Characterization Laboratories, Materials Research and Strategic Technologies, Motorola, Mesa, Arizona, 85202, USA

    Mike Kottke, Peter Fejes & Wei Chen

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  1. Peir Y. Chu
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  2. Robert E. Jones Jr.
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  4. Deborah J. Taylor
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  5. Bo Jiang
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  7. Y. T. Lii
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Chu, P.Y., Jones, R.E., Zurcher, P. et al. Characteristics of spin-on ferroelectric SrBi2Ta2O9 thin film capacitors for ferroelectric random access memory applications. Journal of Materials Research 11, 1065–1068 (1996). https://doi.org/10.1557/JMR.1996.0133

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  • DOI: https://doi.org/10.1557/JMR.1996.0133

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