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Biaxial alignment control of YBa2Cu3O7−x films on random Ni-based alloy with textured yttrium stabilized-zirconia films formed by ion-beam-assisted deposition

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Abstract

Biaxially aligned YBa2Cu3O7−x (YBCO) films were fabricated on random Ni-based alloy tapes with yttrium stabilized-zirconia (YSZ) buffer layers deposited by ion-beam-assisted deposition (IBAD). Ar+ ion bombardment was found to have two significant effects on the crystalline structure of the YSZ buffer layers: to align a [100] axis with the substrate normal and a [111] axis with the bombarding beam axis. The resulting YSZ films were biaxially aligned on the random polycrystalline tapes, and the azimuthal distribution of the a- and b-axes of YBCO films on the top of the YSZ films was restricted to 10° FWHM. A critical current density (Jc) of 1.13 × 106 A/cm2 (77 K, 0 T) was obtained, and 1.1 × 105 A/cm2 was maintained at 5 T (77 K, B⊥c). The existence of both intrinsic and extrinsic pinning properties was clearly observed in the angular dependence of Jc with B⊥I. The longitudinal field effect on Jc was clearly observed, which indicated straight transport currents. This is evidence for strongly coupled current paths that demonstrate the bulk pinning properties of YBCO.

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Authors and Affiliations

  1. Materials Research Lab., Fujikura Ltd., 1-5-1, Kiba, Koto-ku, Tokyo, 135, Japan

    Y. Iijima, M. Hosaka, N. Tanabe, N. Sadakata, T. Saitoh & O. Kohno

  2. Super-GM, 5-14-10, Nishitenma, Osaka, 530, Japan

    K. Takeda

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  1. Y. Iijima
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  2. M. Hosaka
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  3. N. Tanabe
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  4. N. Sadakata
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  7. K. Takeda
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Iijima, Y., Hosaka, M., Tanabe, N. et al. Biaxial alignment control of YBa2Cu3O7−x films on random Ni-based alloy with textured yttrium stabilized-zirconia films formed by ion-beam-assisted deposition. Journal of Materials Research 12, 2913–2923 (1997). https://doi.org/10.1557/JMR.1997.0386

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  • DOI: https://doi.org/10.1557/JMR.1997.0386

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