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Nucleation mechanisms in chemically vapor-deposited mullite coatings on SiC

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Abstract

Dense, uniform, and adherent chemically vapor-deposited mullite coatings were deposited on SiC substrates using the AlCl3–SiCl4–H2–CO2 system. Typical coating morphology consisted of a thin interfacial layer of γ–Al2O3 nanocrystallites embedded within a vitreous SiO2-based matrix. When a critical Al/Si ratio of 3.2 ± 0.29 was reached within this nanocrystalline layer, mullite crystals nucleated and grew as columnar grains. The thickness of the nanocrystalline layer decreased as the input AlCl3/SiCl4 ratio was increased. In all cases, the Al/Si composition in the coating increased from the coating/substrate interface to the coating surface. Critical factors leading to the nucleation and growth of mullite crystals are discussed in this article.

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Authors and Affiliations

  1. Department of Manufacturing Engineering, Boston University, 15 St. Mary’s Street, Boston, Massachusetts, 02215, USA

    Ping Hou, S. N. Basu & V. K. Sarin

Authors
  1. Ping Hou
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  2. S. N. Basu
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  3. V. K. Sarin
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Correspondence to S. N. Basu.

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Hou, P., Basu, S.N. & Sarin, V.K. Nucleation mechanisms in chemically vapor-deposited mullite coatings on SiC. Journal of Materials Research 14, 2952–2958 (1999). https://doi.org/10.1557/JMR.1999.0395

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  • DOI: https://doi.org/10.1557/JMR.1999.0395

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