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Semiconductor nanowires from oxides

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Abstract

Highly pure, ultralong, and uniform-sized semiconductor nanowires in bulk quantity were synthesized by thermal evaporation or laser ablation of semiconductor powders mixed with oxides. Transmission electron microscopy study shows that decomposition of semiconductor suboxides and defect structures play important roles in enhancing the formation and growth of high-quality nanowires. A new growth mechanism is proposed on the basis of microstructure and different morphologies of the nanowires observed.

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Authors and Affiliations

  1. Center of Super-Diamond and Advanced Films and Department of Physics and Materials Science, The City University of Hong Kong, Hong Kong

    S. T. Lee, Y. F. Zhang, N. Wang, Y. H. Tang, I. Bello & C. S. Lee

  2. Department of Materials Science and Engineering, Northern University, Evanston, Illinois, USA

    Y. W. Chung

Authors
  1. S. T. Lee
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  2. Y. F. Zhang
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  3. N. Wang
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  4. Y. H. Tang
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  5. I. Bello
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  6. C. S. Lee
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  7. Y. W. Chung
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Corresponding author

Correspondence to S. T. Lee.

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Lee, S.T., Zhang, Y.F., Wang, N. et al. Semiconductor nanowires from oxides. Journal of Materials Research 14, 4503–4507 (1999). https://doi.org/10.1557/JMR.1999.0611

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  • DOI: https://doi.org/10.1557/JMR.1999.0611

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