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Defect formation due to the crystallization of deep amorphous volumes formed in silicon by mega electron volt (MeV) ion implantation

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Abstract

Solid-phase epitaxy was examined in deep amorphous volumes formed in silicon wafers by multi-energy self-implantation through a mask. Crystallization was effected at elevated temperatures with the amorphous volume being transformed at both lateral and vertical interfaces. Sample topology was mapped using an atomic force microscope. Details of the process were clarified with both plan-view and cross-sectional transmission electron microscopy analyses. Crystallization of the amorphous volumes resulted in the incorporation of a surprisingly large number of dislocations. These arose from a variety of sources. Some of the secondary structures were identified to occur uniquely from the crystallization of volumes in this particular geometry.

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Authors and Affiliations

  1. Micro-Analytical Research Centre, School of Physics, University of Melbourne, 3010, Victoria, Australia

    A. C. Y. Liu & J. C. McCallum

  2. Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, ACT, 0200, Australia

    J. Wong-Leung

Authors
  1. A. C. Y. Liu
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  2. J. C. McCallum
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  3. J. Wong-Leung
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Correspondence to A. C. Y. Liu.

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Liu, A.C.Y., McCallum, J.C. & Wong-Leung, J. Defect formation due to the crystallization of deep amorphous volumes formed in silicon by mega electron volt (MeV) ion implantation. Journal of Materials Research 16, 3229–3237 (2001). https://doi.org/10.1557/JMR.2001.0445

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  • DOI: https://doi.org/10.1557/JMR.2001.0445

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